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Transistor + MOS
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Product description
Parameters
| Part Number | Polarity | VCEO (V) |
IC (mA) |
hEF Min (V) |
hEF Max (V) |
VBR(DSS) (V) |
ID (A) |
RDS(ON) @TYP=10V (mΩ) |
RDS(ON) @TYP=4.5V (mΩ) |
VGS(th) (V) |
Package |
| CJMNT32 | PNP+N-ch | -32 | -1500 | 100 | 300 | 20 | 0.8 | 0.44~1.1 | WBHFBP-06L-F | ||
| CJMNT30 | PNP+N-ch | -30 | -2000 | 100 | 300 | 20 | 0.69 | - | 175 | 0.45~1 | DFNWB2×2-6L-SA |
| CJMNT31 | PNP+N-ch | -30 | -2000 | 100 | 300 | 20 | 0.8 | - | - | 0.45~1 | DFNWB2×2-6L-I |
| CJMNT32 | PNP+N-ch | -32 | -1500 | 100 | 300 | 20 | 0.8 | - | - | 0.44~1.1 | DFNWB2×2-6L-U |
| CJMNT32-W | PNP+N-ch | -30 | -1500 | 40 | 100 | 20 | 0.8 | - | - | 0.44~1.1 | DFNWB2×2-6L-U |
| CJMNT33 | PNP+N-ch | -32 | -1500 | 100 | 300 | 20 | 0.8 | - | - | 0.44~1.1 | DFNWB2×2-6L-I |
| CJMNT34 | PNP+N-ch | -32 | -1500 | 100 | 300 | 20 | 0.8 | - | 175 | 0.44~1.1 | DFNWB2×2-6L-SA |
| CJZM718 | PNP+N-ch | -25 | -3000 | 300 | - | 20 | 0.5 | - | - | 0.45~1.2 | DFNWB3×2-8L-I |
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Transistor + Diode
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Description:
Recommended
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Glass glaze resistance0.00UL1676 and VDE 0860 certification
High working voltage up to 7KV
Maximum overload voltage up to 14KV
Maximum resistance up to 68Mohm
Flame-resistant paint -
CONTACT US
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ADD：Gemini B-1203, Building 1, Tian 'an Digital City,
88 Chunyang Road, Chengyang District, Qingdao
EMAIL：qleader@qleader.com.cn
WEB：www.qdqleader.com
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